 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| www..com MITSUBISHI SEMICONDUCTOR M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63823P, M63823FP and M63823GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor integrated circuits perform high-current driving with extremely low input-current supply. Production lineup has been newly expanded with the addition of 225mil (GP) package. M63823P and M63823FP have the same pin connection as M54523P and M54523FP. (Compatible with M54523P and M54523FP) More over, the features of M63823P and M63823FP are equal or superior to those of M54523P and M54523FP. FEATURES q Three package configurations (P, FP and GP) q Pin connection Compatible with M54523P and M54523FP q q q q q PIN CONFIGURATION IN1 1 IN2 2 IN3 3 INPUT IN4 4 IN5 5 IN6 6 IN7 7 GND 8 16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9 OUTPUT COM COMMON 16P4(P) 16P2N-A(FP) Package type 16P2S-A(GP) High breakdown voltage (BVCEO 50V) High-current driving (IC(max) = 500mA) With clamping diodes PMOS Compatible input Wide operating temperature range (Ta = -40 to +85C) CIRCUIT DIAGRAM COM OUTPUT INPUT 2.7k APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces FUNCTION The M63823P, M63823FP and M63823GP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum.The M63823FP and M63823GP is enclosed in molded small flat package, enabling space-saving design. 7.2k 3k GND The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board Ratings -0.5 ~ +50 500 -0.5 ~ +30 500 50 1.47(P)/1.00(FP)/0.80(GP) -40 ~ +85 -55 ~ +125 Unit V mA V mA V W C C Jan. 2000 MITSUBISHI SEMICONDUCTOR M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) Duty Cycle P : no more than 8% FP : no more than 5% GP : no more than 4% Duty Cycle P : no more than 30% FP : no more than 20% GP : no more than 15% IC 400mA IC 200mA Parameter Limits min 0 0 typ -- -- max 50 400 mA 0 3.85 3.4 0 -- -- -- -- 200 25 25 0.6 Unit V IC VIH VIL "H" input voltage "L" input voltage V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol V (BR) CEO VCE(sat) II VF IR hFE Parameter Collector-emitter breakdown voltage Test conditions ICEO = 100A II = 500A, IC = 350mA Limits min 50 -- -- -- -- -- -- 1000 typ -- 1.2 1.0 0.9 0.9 1.4 -- 2000 max -- 1.6 1.3 1.1 1.4 2.0 100 -- Unit V V mA V A -- Collector-emitter saturation voltage II = 350A, IC = 200mA II = 250A, IC = 100mA Input current VI = 3.85V Clamping diode forward volltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 15 350 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT TIMING DIAGRAM INPUT INPUT Vo 50% 50% Measured device OPEN PG RL OUTPUT OUTPUT 50% 50% 50 CL ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VP = 3.85VP-P (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 500 II = 500A Thermal Derating Factor Characteristics 2.0 Power dissipation Pd(max) (W) 1.5 M63823P Collector current Ic (mA) 400 M63823FP 300 1.0 M63823GP 0.744 0.520 0.418 200 Ta = 25C Ta = 85C Ta = -40C 0.5 100 0 0 25 50 75 85 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M63823P) 500 1 Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63823P) 500 Collector current Ic (mA) Collector current Ic (mA) 400 2 400 1 300 3 4 5 6 7 300 2 200 *The collector current values represent the current per circuit. *Repeated frequencyy 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 100 100 3 4 5 6 7 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M63823FP) 500 1 Duty cycle (%) Duty Cycle-Collector Characteristics (M63823FP) 500 Collector current Ic (mA) Collector current Ic (mA) 400 400 300 2 3 4 5 6 7 300 1 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 2 4 *The collector current values represent the current per circuit. 5 *Repeated frequency 10Hz 76 *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 3 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63823GP) 500 500 Duty Cycle-Collector Characteristics (M63823GP) Collector current Ic (mA) 400 1 Collector current Ic (mA) 400 300 2 300 1 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 3 4 5 6 7 200 2 100 0 20 40 60 80 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 3 4 5 6 7 0 20 40 60 80 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 104 7 5 3 2 VCE = 4V Duty cycle (%) Grounded Emitter Transfer Characteristics 500 DC amplification factor hFE Collector current Ic (mA) Ta = 85C 400 300 103 7 5 3 2 Ta = -40C Ta= 25C 200 Ta = 85C Ta = 25C Ta = -40C 100 102 101 2 3 5 7 102 2 3 5 7 103 0 0 1 2 3 4 5 Collector current IcC (mA) Input Characteristics 16 500 Input voltage VI (V) Clamping Diode Characteristics Forward bias current IF (mA) Input Current II (mA) 12 Ta = -40C 400 300 8 Ta = 25C 200 Ta = 25C 4 Ta = 85C 100 Ta = 85C Ta = -40C 0 0 5 10 15 20 25 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Forward bias voltage VF (V) Jan. 2000 |
Price & Availability of M63823FP
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |